| PART |
Description |
Maker |
| MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|
| MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
16M Dual Bank NOR Flash Memory
|
http://
Samsung
|
| K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D17 |
16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29F017A-12PFTN MBM29F017A-12PFTR MBM29F017A-90 |
FLASH MEMORY 16M (2M x 8) BIT
|
Fujitsu Microelectronics
|
| MBM29LV160TE12TR MBM29LV160BE12TR MBM29LV160BE-12 |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
|
Fujitsu Microelectronics
|
| MBM29PL12LM10PCN MBM29PL12LM MBM29PL12LM10PBT |
FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MX28F160C3BB |
16M-Bit CMOS Flash Memory
|
Macronix
|
| W25Q16CV |
3V 16M-BIT SERIAL FLASH MEMORY
|
Winbond
|
| K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
16M x 8 bit NAND flash memory, 2.7 - 3.6V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
